|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION With TO-126 package Complement to type 2N5193/5194/5195 Excellent safe operating area APPLICATIONS For use in medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER 2N5190 VCBO Collector-base voltage VCEO Collector-emitter voltage INC NG S HA 2N5191 2N5192 2N5190 2N5191 2N5192 Open emitter CON EMI CONDITIONS TOR DUC VALUE 40 60 80 40 60 80 UNIT V Open base V VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature Open collector 5 4 7 1 V A A A W ae ae TC=25ae 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 3.12 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N5190 VCEO(SUS) Collector-emitter sustaining voltage 2N5191 2N5192 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N5190 ICEO Collector cut-off current 2N5191 2N5192 IC=1.5A ;IB=0.15A IC=4A ;IB=1A IC=1.5A ; VCE=2V VCE=40V; IB=0 VCE=60V; IB=0 VCE=80V; IB=0 VCB=40V; IE=0 VCB=60V; IE=0 VCB=80V; IE=0 IC=0.1A; IB=0 SYMBOL 2N5190 2N5191 2N5192 CONDITIONS MIN 40 60 80 TYP. MAX UNIT V 0.6 1.4 1.2 V V V 1.0 mA ICBO Collector cut-off current ICEX IEBO 2N5190 2N5191 2N5192 2N5190 2N5191 Collector cut-off current Emitter cut-off current INC NG S HA 2N5192 2N5190 2N5191 2N5192 2N5190 VCE=40V; VBE(off)=1.5V TC=125ae VCE=60V; VBE(off)=1.5V TC=125ae VCE=80V; VBE(off)=1.5V TC=125ae VEB=5V; IC=0 CON EMI TOR DUC 0.1 2.0 0.1 2.0 0.1 2.0 1.0 0.1 mA mA mA 25 hFE-1 DC current gain IC=1.5A ; VCE=2V 20 100 80 10 hFE-2 DC current gain 2N5191 2N5192 fT Transition frequency IC=1A ; VCE=10V;f=1MHz IC=4A ; VCE=2V 7 2 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5190 2N5191 2N5192 NG S HA INC CON EMI TOR DUC Fig.2 Outline dimensions 3 |
Price & Availability of 2N5190 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |